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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 600 mW
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 4.5 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 35 at 100 uA, 10 V
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 350 mV
