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Vgs(th): 0.9V
Vgs (Max): 10V
Gate Charge (Qg): 0.57nC
Power consumption: 250mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 100mA
Input Capacitance (Ciss): 9pF
Operating temperature range: -65 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 3Ohm
Drive Voltage (Max Rds On, Min Rds On): 1.5|4V
