Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 310 mW
DC Current Gain hFE Max: 475
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: - 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 220
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 250 mV
