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Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Unit Weight: 453.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 700 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 230 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 14 Ohms
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
