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Fall Time: 2.6 ns, 20.4 ns
Rise Time: 15.9 ns, 9.5 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 15 nC, 18 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.4 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 3.6 ns, 5 ns
Typical Turn-Off Delay Time: 16 ns, 29.7 ns
Id - Continuous Drain Current: 4.7 A, 3.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 23 mOhms, 59 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 350 mV, 1.4 V
