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Fall Time: 12 ns, 15.4 ns
Rise Time: 3.4 ns, 4.3 ns
Technology: Si
Unit Weight: 1 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 410 pC, 400 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4.5 ns, 5.2 ns
Typical Turn-Off Delay Time: 24 ns, 31 ns
Id - Continuous Drain Current: 455 mA, 328 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 500 mOhms, 1.2 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV, 1 V
