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Fall Time: 174 ns, 445 ns
Rise Time: 3.1 ns, 2.8 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 600 pC, 700 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 460 mW
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Typical Turn-On Delay Time: 4.9 ns, 5.3 ns
Typical Turn-Off Delay Time: 386 ns, 1247 ns
Id - Continuous Drain Current: 1.1 A, 800 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Rds On - Drain-Source Resistance: 400 mOhms, 700 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
