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Fall Time: 8.9 ns, 8.9 ns
Rise Time: 8.2 ns, 8.2 ns
Technology: Si
Unit Weight: 15 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 8.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 980 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 8.4 ns, 8.4 ns
Typical Turn-Off Delay Time: 40.4 ns, 40.4 ns
Id - Continuous Drain Current: 4.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 22 mOhms, 22 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
