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Vgs(th): 1 V
Vgs (Max): 10V
Power consumption: 350mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 200mA
Input Capacitance (Ciss): 175pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 5Ohm
Drive Voltage (Max Rds On, Min Rds On): 1.2|4.5V
