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Technology: Si
Unit Weight: 19.500 g
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2.47 W
Gain Bandwidth Product fT: 175 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 185 mV
