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Height: 4.95 mm
Length: 4.95 mm
Fall Time: 30 ns
Rise Time: 8 ns
Technology: Si
Unit Weight: 453.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 700 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4 ns
Typical Turn-Off Delay Time: 20 ns
Id - Continuous Drain Current: 450 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 250 mS
Rds On - Drain-Source Resistance: 1.5 Ohms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
