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Width: 1.2 mm
Height: 0.6 mm
Length: 1.66 mm
Technology: Si
Unit Weight: 32 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 750 pC, 1.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 280 mW
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Id - Continuous Drain Current: 190 mA, 155 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 5 Ohms, 8 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
