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Width: 1.65 mm
Height: 1.1 mm
Length: 3.05 mm
Fall Time: 25 ns, 10 ns
Rise Time: 80 ns, 60 ns
Technology: Si
Unit Weight: 85 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 3.12 W, 3.1 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15 ns, 30 ns
Typical Turn-Off Delay Time: 12 ns, 10 ns
Id - Continuous Drain Current: 4 A, 3.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 5 S, 3.5 S
Rds On - Drain-Source Resistance: 65 mOhms, 140 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
