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Fall Time: 10 ns, 10 ns
Rise Time: 12 ns, 22 ns
Technology: Si
Unit Weight: 337.318 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 14 nC, 67.3 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 29 W, 100 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 10 ns, 15 ns
Typical Turn-Off Delay Time: 20 ns, 40 ns
Id - Continuous Drain Current: 16 A, 28 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 47 S, 116 S
Rds On - Drain-Source Resistance: 12 mOhms, 3.7 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 1.2 V
