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Fall Time: 4.8 ns
Rise Time: 1.7 ns
Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 6.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.9 ns
Typical Turn-Off Delay Time: 14 ns
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.8 S
Rds On - Drain-Source Resistance: 36 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
