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Fall Time: 18 ns
Rise Time: 37 ns
Technology: SiC
Unit Weight: 6.200 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 340 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 536 W
Vgs - Gate-Source Voltage: - 5 V, + 20 V
Typical Turn-On Delay Time: 74 ns
Typical Turn-Off Delay Time: 32 ns
Id - Continuous Drain Current: 63 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Vds - Drain-Source Breakdown Voltage: 3.3 kV
Vgs th - Gate-Source Threshold Voltage: 3.5 V
