Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 543.605 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.8 W
Gate-Source Cutoff Voltage: - 6 V
Drain-Source Current at Vgs=0: 100 mA
Id - Continuous Drain Current: 500 pA
Rds On - Drain-Source Resistance: 40 Ohms
Vgs - Gate-Source Breakdown Voltage: - 40 V
Vds - Drain-Source Breakdown Voltage: 15 V
