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IXYS IXFR58N20 MOSFETs HiPerFET Power

Name: IXYS IXFR58N20 MOSFETs HiPerFET Power
Brand: IXYS

ModelIXFR58N20

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Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 50 A

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V