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Gain: 17.5 dB
Technology: GaN
Output Power: 100 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 83 W
Maximum Operating Frequency: 3 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 8.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
