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Technology: Si
Configuration: Single
Transistor Type: Bipolar Power
Operating Frequency: 1.215 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 110 W
Emitter- Base Voltage VEBO: 3.5 V
Continuous Collector Current: 3 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 55 V
