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Gain: 18.5 dB
Technology: Si
Output Power: 200 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 960 MHz to 1.6 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 225 C
Rds On - Drain-Source Resistance: 340 mOhms
Vds - Drain-Source Breakdown Voltage: 105 V
