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Gain: 16.5 dB
Technology: Si
Output Power: 120 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.8 GHz to 2.2 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 2.69 V
Id - Continuous Drain Current: 240 mA
Rds On - Drain-Source Resistance: 300 mOhms
Vds - Drain-Source Breakdown Voltage: 65 V
