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Technology: Si
Unit Weight: 212 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 630
Gain Bandwidth Product fT: 260 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: - 800 mA
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 700 mV
