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Width: 16.26 mm
Height: 5.31 mm
Length: 21.46 mm
Fall Time: 33 ns
Rise Time: 38 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Mounting Style: Through Hole
Qg - Gate Charge: 150 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 625 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 26 ns
Typical Turn-Off Delay Time: 115 ns
Id - Continuous Drain Current: 23 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 21 S
Rds On - Drain-Source Resistance: 400 mOhms
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs th - Gate-Source Threshold Voltage: 4 V
