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Width: 25.4 mm
Height: 9.6 mm
Length: 38.2 mm
Fall Time: 90 ns
Rise Time: 60 ns
Technology: Si
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 960 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 100 ns
Typical Turn-Off Delay Time: 315 ns
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 240 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3 V
