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Width: 16.26 mm
Height: 5.31 mm
Length: 21.46 mm
Fall Time: 7.2 ns
Rise Time: 7.8 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 60 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 290 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 8.5 ns
Typical Turn-Off Delay Time: 29 ns
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 7.5 S
Rds On - Drain-Source Resistance: 1.53 Ohms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
