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Vgs (Max): 20V
Power consumption: 490mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 90V
Continuous drain current: 200mA
Input Capacitance (Ciss): 150pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 6Ohm
Drive Voltage (Max Rds On, Min Rds On): 0V
