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Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Id - Continuous Drain Current: 120 mA
Rds On - Drain-Source Resistance: 25 Ohms
Vds - Drain-Source Breakdown Voltage: 350 V
