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Width: 4.83 mm
Height: 9.02 mm
Length: 10.67 mm
Fall Time: 20 ns
Rise Time: 15 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Depletion
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 15 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 25 Ohms
Vds - Drain-Source Breakdown Voltage: 400 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
