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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.8 W
Maximum Drain Gate Voltage: 30 V
Id - Continuous Drain Current: 175 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 25 Ohms
Vgs - Gate-Source Breakdown Voltage: 30 V
Vds - Drain-Source Breakdown Voltage: 30 V
