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Fall Time: 67 ns
Rise Time: 55 ns
Technology: SiC
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 2.031 kW
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Typical Turn-On Delay Time: 56 ns
Typical Turn-Off Delay Time: 166 ns
Id - Continuous Drain Current: 495 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 5.2 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
