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Width: 9.4 mm
Height: 6.6 mm
Length: 9.4 mm
Fall Time: 22 ns
Rise Time: 16 ns
Technology: Si
Unit Weight: 1.109 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4 ns
Typical Turn-Off Delay Time: 16 ns
Id - Continuous Drain Current: 750 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 900 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
