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Width: 4.19 mm
Height: 5.33 mm
Length: 5.21 mm
Fall Time: 25 ns
Rise Time: 15 ns
Technology: Si
Unit Weight: 453.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 P-Channel
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 740 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 650 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1000 mmho
Rds On - Drain-Source Resistance: 1 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
