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Technology: Si
Unit Weight: 23.025 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 160 at 20 mA, 10 V
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 300 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40 at 20 mA, 10 V
Collector- Emitter Voltage VCEO Max: 250 V
Collector-Emitter Saturation Voltage: 500 mV
