Nexperia BC847BV,315 BJTs - Bipolar Transistors 45 V, 100 mA NPN/PNP general purpose transistor

Width: 1.3 mm

Height: 0.6 mm

Length: 1.7 mm

Technology: Si

Unit Weight: 2.792 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 300 mV