Nexperia PBHV9115TVL BJTs - Bipolar Transistors PBHV9115T/SOT23/TO-236AB

Technology: Si

Unit Weight: 7.898 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

Gain Bandwidth Product fT: 115 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 150 mV