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Nexperia PBSS4032PT,215 BJTs - Bipolar Transistors PBSS4032PT/SOT23/TO-236AB

ModelPBSS4032PT,215
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Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 390 mW

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 2.4 A

Maximum DC Collector Current: 2.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 220 mV

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