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Nexperia PHPT610035NKX BJTs - Bipolar Transistors PNP/PNP matched high power double bipolar transistor

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Technology: Si

Unit Weight: 96.690 mg

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 25 W

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 225 mV

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