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Vgs(th): 1.5 V
Vgs (Max): 20V
Gate Charge (Qg): 45nC
Power consumption: 780mW|12.5W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 60V
Continuous drain current: 4.8A
Input Capacitance (Ciss): 1160pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 41mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
