onsemi FQA7N90_F109 MOSFET
Manufactureronsemi(View more products from this manufacturer)
ModelFQA7N90_F109
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Vgs(th): 5 V
Vgs (Max): 30V
Gate Charge (Qg): 59nC
Power consumption: 198W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 900V
Continuous drain current: 7.4A
Input Capacitance (Ciss): 2280pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 1.55Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
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