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Fall Time: 29 us
Rise Time: 9 us
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.2 W
Vgs - Gate-Source Voltage: - 14 V, + 14 V
Typical Turn-On Delay Time: 13 us
Typical Turn-Off Delay Time: 70 us
Id - Continuous Drain Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 185 mOhms
Vds - Drain-Source Breakdown Voltage: 46 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
