onsemi NSVMSD601-RT1G BJTs - Bipolar Transistors SS SC59 GP XSTR NPN PB FR
Manufactureronsemi(View more products from this manufacturer)
ModelNSVMSD601-RT1G
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 11.030 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 500 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts