Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 506 ns, 36 ns
Rise Time: 227 ns, 23 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.3 nC, 2.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 270 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V, - 8 V, + 8 V
Typical Turn-On Delay Time: 83 ns, 13 ns
Typical Turn-Off Delay Time: 786 ns, 50 ns
Id - Continuous Drain Current: 630 mA, 775 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2 S
Rds On - Drain-Source Resistance: 290 mOhms, 220 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V, 8 V
Vgs th - Gate-Source Threshold Voltage: 920 mV, 830 mV
