onsemi NTJD4105CT2G MOSFET 20V/-8V 0.63A/-.775A Complementary

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 506 ns, 36 ns

Rise Time: 227 ns, 23 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 1.3 nC, 2.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 270 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V, - 8 V, + 8 V

Typical Turn-On Delay Time: 83 ns, 13 ns

Typical Turn-Off Delay Time: 786 ns, 50 ns

Id - Continuous Drain Current: 630 mA, 775 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 290 mOhms, 220 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V, 8 V

Vgs th - Gate-Source Threshold Voltage: 920 mV, 830 mV