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Fall Time: 80 ns, 171 ns
Rise Time: 25.5 ns, 71 ns
Technology: Si
Unit Weight: 2.600 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 125 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 16.5 ns, 37 ns
Typical Turn-Off Delay Time: 142 ns, 280 ns
Id - Continuous Drain Current: 220 mA, 127 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.48 S, 0.35 S
Rds On - Drain-Source Resistance: 800 mOhms, 2.1 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
