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Width: 1.3 mm
Height: 0.94 mm
Length: 2.9 mm
Fall Time: 1.6 ns, 1.8 ns
Rise Time: 5.8 ns, 6.7 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 3.6 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 730 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.8 ns, 5.8 ns
Typical Turn-Off Delay Time: 14 ns, 13.6 ns
Id - Continuous Drain Current: 2.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 5.3 S
Rds On - Drain-Source Resistance: 110 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
