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Width: 1.2 mm
Height: 0.55 mm
Length: 1.6 mm
Fall Time: 4 ns, 12 ns
Rise Time: 4 ns, 12 ns
Technology: Si
Unit Weight: 3 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 2.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 250 mW
Vgs - Gate-Source Voltage: - 6 V, + 6 V
Typical Turn-On Delay Time: 6 ns, 10 ns
Typical Turn-Off Delay Time: 16 ns, 35 ns
Id - Continuous Drain Current: 540 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 550 mOhms, 900 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 450 mV, 1 V
