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Width: 4.9 mm
Height: 16.2 - 4 mm
Length: 15.2 mm
Technology: Si
Unit Weight: 6.500 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 80 W
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 10 A
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 1 V
