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Width: 3.95 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 3 us
Rise Time: 11 us
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3 W
Vgs - Gate-Source Voltage: - 2.5 V, + 16 V
Typical Turn-On Delay Time: 1.9 us
Typical Turn-Off Delay Time: 1.1 us
Id - Continuous Drain Current: 3 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 3.3 S
Rds On - Drain-Source Resistance: 160 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
