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Technology: Si
Unit Weight: 6 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 500 at 100 mA, 2 V
Gain Bandwidth Product fT: 360 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 30 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200 at 100 mA, 2 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 300 mV
