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STMicroelectronics 2N2222AUB1 BJTs - Bipolar Transistors Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model

Name: STMicroelectronics 2N2222AUB1 BJTs - Bipolar Transistors Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

Model2N2222AUB1

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 730 mW

DC Current Gain hFE Max: 300

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 2.5

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV